2SK1535 N-Channel MOSFET Transistor 900V 3A TO-220F
The 2SK1535 is an N-Channel MOSFET transistor. It supports a drain-source voltage of 900V minimum and a continuous drain current of 3A at TC=25°C. The device has a maximum static drain-source on-resistance of 5Ω at VGS=10V. It is supplied in a TO-220F package with Pin 1 Gate, Pin 2 Drain, and Pin 3 Source. The datasheet describes it for use in motor drive, DC-DC converter, power switch, and solenoid drive applications.
Features
- Drain Current ID = 3A @ TC=25°C
- Drain-Source Voltage VDSS = 900V minimum
- Static Drain-Source On-Resistance RDS(on) = 5Ω maximum @ VGS=10V
Specifications
| Key Ratings | |
|---|---|
| Drain Current ID | 3A @ TC=25°C |
| Drain-Source Voltage VDSS | 900V (Min) |
| Static Drain-Source On-Resistance RDS(on) | 5Ω (Max) @ VGS=10V |
| Absolute Maximum Ratings (Ta=25°C) | |
| Drain-Source Voltage VDSS | 900V |
| Gate-Source Voltage VGS, Continuous | ±30V |
| Drain Current ID, Continuous | 3A |
| Drain Current IDM, Single Pulse | 12A |
| Total Dissipation PD | 30W @ TC=25°C |
| Max Operating Junction Temperature TJ | 150°C |
| Storage Temperature Tstg | -55 to 150°C |
| Thermal Characteristics | |
| Thermal Resistance, Junction to Case Rth j-c | 4.17°C/W |
| Electrical Characteristics (TC=25°C unless otherwise specified) | |
| Drain-Source Breakdown Voltage V(BR)DSS | 900V Min; VGS=0, ID=1mA |
| Zero Gate Voltage Drain Current IDSS | 10µA Max; VDS=900V, VGS=0V |
| Gate-Body Leakage Current IGSS | ±1µA Max; VGS=±30V, VDS=0V |
| Gate Threshold Voltage VGS(th) | 2.0V Min to 4.0V Max; VDS=VGS, ID=1mA |
| Drain-Source On-Resistance RDS(on) | 5Ω Max; VGS=10V, ID=1.5A |
| Forward On-Voltage VSD | 1.50V Max; IS=3A, VGS=0V |
Applications
- Motor drive
- DC-DC converter
- Power switch
- Solenoid drive
Package Content
- 1 x 2SK1535 N-Channel MOSFET Transistor 900V 3A TO-220F
