2SK2651 N-Channel MOSFET Transistor 900V 6A TO-220F
2SK2651 N-Channel MOSFET: 900V, 6A, 50W in an isolated TO-220F package. High-speed switching with a low 2.5Ω max on-resistance.
35.00 EGP
Buy Now2SK2651 N-Channel MOSFET Transistor 900V 6A TO-220F
The 2SK2651 is a high-performance, N-channel MOSFET. Designed for high-voltage applications, it offers exceptionally high-speed switching and low on-resistance, making it highly efficient for demanding power conversion tasks. Housed in an isolated TO-220F package, it features a built-in reverse diode with excellent avalanche capability, operating reliably without the risk of secondary breakdown.
Features
- High-Speed Switching
- Low On-Resistance
- Low Driving Power
- Robust Voltage Handling
- No Secondary Breakdown
- Repetitive Avalanche Rated
Specifications
| Absolute Maximum Ratings (Tc = 25°C) | |||
|---|---|---|---|
| Item | Symbol | Rating | Unit |
| Drain-Source Voltage | VDS | 900 | V |
| Continuous Drain Current | ID | 6 | A |
| Pulsed Drain Current | ID(puls) | 24 | A |
| Gate-Source Voltage | VGS | ±30 | V |
| Avalanche Current (Repetitive or Non-Repetitive, Tch ≤ 150°C) | IAV | 6 | A |
| Avalanche Energy | EAS | 71.9 | mJ |
| Max. Power Dissipation | PD | 50 | W |
| Operating Channel Temperature Range | Tch | 150 | °C |
| Storage Temperature Range | Tstg | -55 ~ +150 | °C |
| Electrical Characteristics (Tc = 25°C unless otherwise specified) | |||
| Item / Test Conditions | Symbol | Typ / Max Values | Unit |
| Drain-Source Breakdown Voltage (VGS = 0V, ID = 1mA) | V(BR)DSS | 900 (Min) | V |
| Gate Threshold Voltage (VDS = VGS, ID = 1mA) | VGS(th) | 3.5 (Min) / 4.0 (Typ) / 4.5 (Max) | V |
| Zero Gate Voltage Drain Current (VDS = 900V, Tch = 25°C, VGS = 0V) | IDSS | 10 (Typ) / 500 (Max) | μA |
| Zero Gate Voltage Drain Current (VDS = 900V, Tch = 125°C, VGS = 0V) | IDSS | 0.2 (Typ) / 1.0 (Max) | mA |
| Gate Source Leakage Current (VDS = 0V, VGS = ±30V) | IGSS | 10 (Typ) / 100 (Max) | nA |
| Drain Source On-State Resistance (VGS = 10V, ID = 3A) | RDS(on) | 1.87 (Typ) / 2.5 (Max) | Ω |
| Forward Transconductance (VDS = 25V, ID = 3A) | gfs | 4 (Min) | S |
| Dynamic & Switching Characteristics (f = 1MHz, VGS = 0V, VDS = 25V) | |||
| Input Capacitance | Ciss | 900 (Typ) | pF |
| Output Capacitance | Coss | 130 (Typ) | pF |
| Reverse Transfer Capacitance | Crss | 70 (Typ) | pF |
| Turn-On Delay Time (VCC = 600V, ID = 6A, VGS = 10V, RGS = 10 Ω) | td(on) | 25 (Typ) | ns |
| Rise Time (VCC = 600V, ID = 6A, VGS = 10V, RGS = 10 Ω) | tr | 80 (Typ) | ns |
| Turn-Off Delay Time (VCC = 600V, ID = 6A, VGS = 10V, RGS = 10 Ω) | td(off) | 70 (Typ) | ns |
| Fall Time (VCC = 600V, ID = 6A, VGS = 10V, RGS = 10 Ω) | tf | 40 (Typ) | ns |
| Reverse Diode Characteristics | |||
| Diode Forward On-Voltage (IF = 2xID, VGS = 0V, Tch = 25°C) | VSD | 1.0 (Typ) | V |
| Reverse Recovery Time (IF = IDR, VGS = 0V, -dIF/dt = 100A/μs, Tch = 25°C) | trr | 850 (Typ) | ns |
| Reverse Recovery Charge (IF = IDR, VGS = 0V, -dIF/dt = 100A/μs, Tch = 25°C) | Qrr | 8.5 (Typ) | μC |
| Thermal Characteristics | |||
| Item | Symbol | Max Value | Unit |
| Thermal Resistance (Channel to Case) | Rth(ch-c) | 3.125 | °C/W |
| Thermal Resistance (Channel to Air) | Rth(ch-a) | 62.5 | °C/W |
Applications
- Switching Regulators / Switch-Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- General Purpose Power Amplifiers
Package Content
- 1 x 2SK2651 N-Channel MOSFET Transistor 900V 6A TO-220F
DataSheet
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