Description
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
Features
- Good hFE linearity
- High fT frequency
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
Application
- Audio amplifiers
- Linear and switching industrial equipment
Specifications
| Product Attribute | Attribute Value |
| Product Category: | Darlington Transistors |
| Transistor Polarity: | NPN |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 8 A |
| Maximum Collector Cut-off Current: | 200 uA |
| Pd – Power Dissipation: | 60 W |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Maximum Operating Temperature: | + 150 C |
| Continuous Collector Current: | 8 A |
| DC Collector/Base Gain hfe Min: | 750 |
