Features
- RDS(on)=13 mΩ(Typ.), VGS = 10V, ID = 40A
- Qg(TOT)=49 nc(Typ.), VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse/Repetitive Pulse)
Specifications:
| Manufacturer | ONSEMI |
| Type of transistor | N-MOSFET |
| Technology | PowerTrench® |
| Polarisation | unipolar |
| Drain-source voltage | 100V |
| Drain current | 80A |
| Power dissipation | 255W |
| Case | TO220AB |
| Gate-source voltage | ±20V |
| On-state resistance | 37mΩ |
| Mounting | THT |
| Gate charge | 9.8nC |
| Kind of package | tube |
| Kind of channel | enhanced |
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier