FGL80N120 IGBT Power Transistor 1200V 80A TO−247−3LD
The FGL80N120 IGBT Power Transistor 1200V 80A TO−247−3LD utilizes advanced Trench Field‑Stop technology to deliver low collector‑emitter saturation voltage and optimized switching performance. Packaged in a rugged TO‑247‑3LD case, it combines high breakdown capability with an integrated fast‑recovery anti‑parallel diode and positive temperature coefficient for reliable operation under heavy load and harsh environments.
Features
- 1200 V collector‑emitter breakdown voltage.
- Low VCE(sat), typ. 2.35 V @ 80 A, TC=25 °C.
- High continuous collector current: 80 A @ TC=100 °C (160 A @ TC=25 °C).
- Pulsed collector current up to 320 A.
- Fast switching: turn‑on delay ≈ 49 ns; turn‑off delay ≈ 254 ns.
- Integrated fast‑recovery anti‑parallel diode.
- Positive temperature coefficient for safe parallel operation.
- RoHS‑compliant construction.
Specifications
Absolute Maximum Ratings
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VCES | Collector-Emitter Voltage | 1200 | V |
| IC | Collector Current @ TC = 25°C | 160 | A |
| Collector Current @ TC = 100°C | 80 | A | |
| ICM | Pulsed Collector Current, tp limited by TJmax | 320 | A |
| IF | Diode Continuous Forward Current @ TC = 25°C | 160 | A |
| Diode Continuous Forward Current @ TC = 100°C | 80 | A | |
| IFM | Diode Maximum Forward Current, limited by TJmax | 160 | A |
| VGES | Gate-Emitter Voltage | ±20 | V |
| PD | Power Dissipation @ TC = 25°C | 367 | W |
| TJmax | Operating Junction Temperature | 150 | °C |
| Tstg | Storage Temperature Range | –55 to 150 | °C |
| TL | Maximum Temperature for Soldering | 260 | °C |
Dimensions
Applications
- BLDC motor drives and industrial motor control.
- Uninterruptible power supplies (UPS) and portable power stations.
- Power factor correction (PFC) circuits.
- Solar inverters and renewable‑energy converters.
- General‑purpose high‑voltage switching in industrial electronics.
