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FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220
FQP13N80 800V 12.6A N-Channel Power MOSFET (TO-220). Fast switching, low RDS(on) & 100% avalanche tested. Ideal for SMPS, active PFC & lamp ballasts.
25.00 EGP
Buy NowFQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220
The FQP13N80 is a high-voltage, N-channel enhancement-mode power MOSFET built using Fairchild’s proprietary planar-stripe DMOS process (QFET technology). This design minimizes on-state resistance, delivers fast and efficient switching, and withstands high-energy pulses in avalanche and commutation modes — making the device exceptionally rugged in demanding power circuits.
Features
- High voltage blocking: 800 V drain–source
- High current handling: 13 A continuous drain current (TC = 25 °C)
- Low on-state resistance: RDS(on) = 0.45 Ω max @ VGS = 10 V, ID = 6.5 A
- Low gate drive requirement — efficient switching with reduced drive loss
- Rugged avalanche and commutation (dv/dt) capability
- Integral body-drain diode
- Standard TO-220 package — easy mounting and heatsinking
- Max junction temperature: 150 °C
Specifications
| General | |
|---|---|
| Part Number | FQP13N80 |
| Manufacturer | Fairchild Semiconductor |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Package | TO-220 |
| Technology | Proprietary planar stripe DMOS |
| Absolute Maximum Ratings | |
| Drain-Source Voltage (VDSS) | 800 V |
| Continuous Drain Current (TC = 25°C) | 12.6 A |
| Continuous Drain Current (TC = 100°C) | 8.0 A |
| Pulsed Drain Current (IDM) | 50.4 A |
| Gate-Source Voltage (VGSS) | ±30 V |
| Single Pulsed Avalanche Energy (EAS) | 1100 mJ |
| Avalanche Current (IAR) | 12.6 A |
| Repetitive Avalanche Energy (EAR) | 30 mJ |
| Peak Diode Recovery dv/dt | 4.0 V/ns |
| Power Dissipation (TC = 25°C) | 300 W |
| Power Dissipation Derating Above 25°C | 2.38 W/°C |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Maximum Lead Temperature | 300 °C (1/8″ from case for 5 seconds) |
| Thermal Characteristics | |
| Thermal Resistance, Junction-to-Case | 0.42 °C/W (max) |
| Thermal Resistance, Case-to-Sink | 0.24 °C/W (typ) |
| Thermal Resistance, Junction-to-Ambient | 40 °C/W (max) |
| Off Characteristics | |
| Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) | 800 V (min) |
| Breakdown Voltage Temperature Coefficient (ID = 250 µA) | 0.95 V/°C |
| Zero Gate Voltage Drain Current (VDS = 800 V, VGS = 0 V) | 10 µA (max) |
| Zero Gate Voltage Drain Current (VDS = 640 V, TC = 125°C) | 100 µA (max) |
| Gate-Body Leakage Current, Forward (VGS = 30 V, VDS = 0 V) | 100 nA (max) |
| Gate-Body Leakage Current, Reverse (VGS = -30 V, VDS = 0 V) | -100 nA (max) |
| On Characteristics | |
| Gate Threshold Voltage (VDS = VGS, ID = 250 µA) | 3.0 V to 5.0 V |
| Static Drain-Source On-Resistance (VGS = 10 V, ID = 6.3 A) | 0.58 Ω (typ), 0.75 Ω (max) |
| Forward Transconductance (VDS = 50 V, ID = 6.3 A) | 13 S (typ) |
| Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1 MHz) | |
| Input Capacitance (Ciss) | 2700 pF (typ), 3500 pF (max) |
| Output Capacitance (Coss) | 275 pF (typ), 360 pF (max) |
| Reverse Transfer Capacitance (Crss) | 30 pF (typ), 39 pF (max) |
| Switching Characteristics (VDD = 400 V, ID = 12.6 A, RG = 25 Ω) | |
| Turn-On Delay Time (td(on)) | 60 ns (typ), 130 ns (max) |
| Turn-On Rise Time (tr) | 150 ns (typ), 310 ns (max) |
| Turn-Off Delay Time (td(off)) | 155 ns (typ), 320 ns (max) |
| Turn-Off Fall Time (tf) | 110 ns (typ), 230 ns (max) |
| Gate Charge (VDS = 640 V, ID = 12.6 A, VGS = 10 V) | |
| Total Gate Charge (Qg) | 68 nC (typ), 88 nC (max) |
| Gate-Source Charge (Qgs) | 15 nC (typ) |
| Gate-Drain Charge (Qgd) | 32 nC (typ) |
| Drain-Source Diode Characteristics | |
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 12.6 A |
| Maximum Pulsed Drain-Source Diode Forward Current (ISM) | 50.4 A |
| Drain-Source Diode Forward Voltage (VGS = 0 V, IS = 12.6 A) | 1.4 V (max) |
| Reverse Recovery Time (trr) (VGS = 0 V, IS = 12.6 A, dIF/dt = 100 A/µs) | 850 ns (typ) |
| Reverse Recovery Charge (Qrr) | 11.3 µC (typ) |
Applications
- High-Efficiency Switched-Mode Power Supplies (SMPS)
- Active Power Factor Correction (PFC) Circuits
- Electronic Lamp Ballasts (based on half-bridge topology)
Package Content
- 1 x FQP13N80 N-Channel Power MOSFET 800V 12.6A TO-220