IRFP150N N-Channel Power MOSFET
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification level
- High performance in low frequency applications
- Standard pinout allows for drop in replacement
- High current carrying capability
Parametrics
| Parametrics | IRFP150N |
| ID (@ TC=25°C) max | 42 A |
| ID (@25°C) max | 42 A |
| Mounting | THT |
| Operating Temperature min max | -55 °C 175 °C |
| Ptot max | 140 W |
| Package | TO-247 |
| Polarity | N |
| QG (typ @10V) | 73.3 nC |
| Qgd | 38.7 nC |
| RDS (on) (@10V) max | 36 mΩ |
| RthJC max | 1.1 K/W |
| Tj max | 175 °C |
| VDS max | 100 V |
| VGS(th) min max | 3 V 2 V 4 V |
| VGS max | 20 V |
Reviews
There are no reviews yet.