IRLZ44Z N-Channel MOSFET Transistor 55V 51A Through Hole TO-220AB
IRLZ44Z N-Channel MOSFET: 55V, 51A logic-level drive, fast switching, and ultra-low on-resistance. Rated for 175°C in a TO-220AB package.
30.00 EGP
In stockSKU 3496300149551
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IRLZ44Z N-Channel MOSFET Transistor 55V 51A Through Hole TO-220AB
The IRLZ44Z is an N-Channel HEXFET® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Designed for efficiency and reliability, this device features a high operating temperature of and fast switching speeds, making it a robust component for a wide range of electronic designs.
Features
- Logic Level Drive: Designed to be triggered by logic-level gate voltages.
- Advanced Process Technology: Optimized for ultra-low on-resistance ().
- High Temperature Rating: Operating junction temperature up to .
- Fast Switching: Engineered for high-speed performance in power circuits.
- Repetitive Avalanche: Built to allow repetitive avalanche energy up to .
- Lead-Free: Environmentally friendly construction.
Specifications
| Parameter | Value | Conditions / Notes |
|---|---|---|
| Absolute Maximum Ratings | ||
| Drain-to-Source Voltage (VDSS) | 55 V | – |
| Continuous Drain Current (ID) @ 25°C | 51 A | VGS @ 10V (Silicon Limited) |
| Continuous Drain Current (ID) @ 100°C | 36 A | VGS @ 10V |
| Pulsed Drain Current (IDM) | 204 A | – |
| Power Dissipation (PD) @ 25°C | 80 W | – |
| Gate-to-Source Voltage (VGS) | ± 16 V | – |
| Single Pulse Avalanche Energy (EAS) | 78 mJ | Thermally limited |
| Operating Junction and Storage Temp Range | -55 to +175 °C | – |
| Static Electrical Characteristics (@ TJ = 25°C) | ||
| Static Drain-to-Source On-Resistance (RDS(on)) | 13.5 mΩ | VGS = 10V, ID = 31A |
| Static Drain-to-Source On-Resistance (RDS(on)) | 20 mΩ | VGS = 5.0V, ID = 30A |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22.5 mΩ | VGS = 4.5V, ID = 15A |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 3.0 V | VDS = VGS, ID = 250μA |
| Forward Transconductance (gfs) | 27 S | VDS = 25V, ID = 31A (Min) |
| Dynamic & Switching Characteristics | ||
| Total Gate Charge (Qg) | 24 nC (Typ) / 36 nC (Max) | ID = 31A, VDS = 44V, VGS = 5.0V |
| Turn-On Delay Time (td(on)) | 14 ns | VDD = 50V, ID = 31A, RG = 7.5Ω |
| Rise Time (tr) | 160 ns | VDD = 50V, ID = 31A, RG = 7.5Ω |
| Turn-Off Delay Time (td(off)) | 25 ns | VDD = 50V, ID = 31A, RG = 7.5Ω |
| Fall Time (tf) | 42 ns | VDD = 50V, ID = 31A, RG = 7.5Ω |
| Thermal Resistance | ||
| Junction-to-Case (RθJC) | 1.87 °C/W | Max |
| Junction-to-Ambient (RθJA) | 62 °C/W | Max |
Applications
- The combination of fast switching, rugged design, and low on-resistance makes the IRLZ44Z suitable for an extremely wide variety of efficient and reliable power applications.
Package Content
- 1 x IRLZ44Z N-Channel MOSFET Transistor 55V 51A Through Hole TO-220AB
DataSheet
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