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LM4158D NPN High Voltage Switching Transistor 410V 1.5A 23W TO-126

LM4158D 410V 1.5A NPN high-voltage switching transistor with 600V collector-base rating, 23W power dissipation, and TO-126 through-hole package

25.00 EGP

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LM4158D NPN High Voltage Switching Transistor 410V 1.5A 23W TO-126

The LM4158D NPN High Voltage Switching Transistor is a silicon NPN transistor designed for high-voltage switching applications. It provides a maximum collector-emitter voltage of 410V and a maximum collector-base voltage of 600V, making it suitable for circuits requiring high voltage capability. The maximum collector current is specified as 1.5A.

Features:
  • NPN high-voltage switching transistor.
  • 410V maximum collector-emitter voltage.
  • 600V maximum collector-base voltage.
  • 9V maximum emitter-base voltage.
  • 1.5A maximum collector current.
  • 23W maximum collector power dissipation.
  • High-voltage switching capability.
Specifications:
Parameter Value
Part Number LM4158D
Transistor Type NPN High Voltage Switching Transistor
Material Silicon
Package TO-126
Mounting Type Through-Hole
Collector-Base Voltage (VCBO) 600V
Collector-Emitter Voltage (VCEO) 410V
Emitter-Base Voltage (VEBO) 9V
Collector Current (IC) 1.5A
Total Collector Power Dissipation (PC) 23W
Minimum DC Current Gain (hFE) 6
Maximum Junction Temperature (Tj) 150°C
Package Type TO-126
Pin Configuration:

 Applications:
  • High-voltage switching circuits.
  • Power switching circuits.
  • Switching power supplies.
  • Electronic ballast circuits.
  • Fluorescent lamp circuits.
  • Electronic power-control circuits.
  • High-speed switching applications.
  • General-purpose NPN switching circuits.
Package Include:

1x LM4158D NPN High Voltage Switching Transistor 410V 1.5A 23W TO-126.

Datasheet

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