M27C4001-12F1 4Mbit (512K x 8) 120ns UV EPROM IC DIP-32
M27C4001-12F1 4Mbit UV EPROM, 512K x 8 organization, 120ns access time, FDIP32W ceramic windowed package, 0–70°C.
75.00 EGP
Buy NowM27C4001-12F1 4Mbit (512K x 8) 120ns UV EPROM IC DIP-32
A 4Mbit UV EPROM integrated circuit designed for non-volatile program and data storage in microprocessor-based systems. The device provides a 524,288 × 8-bit memory organization and uses a parallel address and data interface with 19 address inputs and 8 data outputs.
Features:
- 4Mbit UV-erasable EPROM memory.
- 524,288 × 8-bit memory organization.
- 512K × 8 parallel memory architecture.
- 120ns maximum access-time grade for the
-12variant. - 5V±10% supply voltage during read operation.
- 19 address inputs from A0 to A18.
- 8 data outputs from Q0 to Q7.
Specifications:
| Parameter | Value |
|---|---|
| Part Number | M27C4001-12F1 |
| Memory Type | UV EPROM |
| Memory Capacity | 4Mbit |
| Organization | 524,288 x 8bit |
| Organization Equivalent | 512K x 8 |
| Access Time | 120ns |
| Supply Voltage | 5V±10% |
| Programming Voltage | 12.75V±0.25V |
| Programming Supply Voltage | 6.25V±0.25V |
| Address Inputs | A0–A18 |
| Data Outputs | Q0–Q7 |
| Control Inputs | E, G |
| Active Supply Current | 30mA at 5MHz |
| CMOS Standby Current | 100µA |
| Input Leakage Current | ±10µA |
| Output Leakage Current | ±10µA |
| Input Low Voltage | -0.3V to 0.8V |
| Input High Voltage | 2V to VCC+1V |
| Package | FDIP32W |
| Package Type | 32-Pin Ceramic Frit-Seal DIP with Window |
| Temperature Range | 0°C to 70°C |
Pin Configuration:
Footprint:
Applications:
- Microprocessor program memory.
- Legacy computer systems.
- Embedded system firmware storage.
- Industrial control equipment.
- Electronic equipment requiring reprogrammable UV EPROM memory.
- Development and prototyping systems.
- Replacement of compatible 4Mbit EPROM devices.
Package Include:
1x M27C4001-12F1 4Mbit (512K x 8) 120ns UV EPROM IC DIP-32.