Specifications:
- Type Designator: 70N06
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Pd – Maximum Power Dissipation: 200 W
- |Vds| – Maximum Drain-Source Voltage: 60 V
- |Vgs| – Maximum Gate-Source Voltage: 20 V
- |Vgs(th)| – Maximum Gate-Threshold Voltage: 4 V
- |Id| – Maximum Drain Current: 70 A
- Tj – Maximum Junction Temperature: 175 °C
- Qg – Total Gate Charge: 70 nC
- tr – Rise Time: 30 nS
- Coss – Output Capacitance: 490 pF
- Rds – Maximum Drain-Source On-State Resistance: 0.014 Ohm
- Package: TO-220
