IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC
IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC is designed for efficient power switching, amplification in power supplies, industrial applications.
45.00 EGP
In stockSKU 3496300139026
Buy Now
Shipping across EgyptDelivered to your door
Cash on deliveryPay when your order arrives
Not sure it fits your project?Ask us on WhatsApp - we reply fast
IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC
IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC is a third-generation HEXFET® power MOSFET designed for high-speed switching and low conduction losses. It features a maximum drain-source voltage of 60V, continuous drain current up to 57A, and an ultra-low 28mΩ on-state resistance. Packaged in the TO-247AC through-hole package, it is ideal for power supplies, motor drives, DC-DC converters, inverters, battery-powered systems, and industrial power control applications. The device also offers fast switching performance, ease of paralleling, and an isolated mounting hole for simplified thermal management.
Features
- Low 28mΩ drain-source on-state resistance.
- High continuous drain current of 57A.
- Maximum drain-source voltage of 60V.
- Fast switching performance for high-efficiency circuits.
- Dynamic dv/dt ruggedness for improved reliability.
- Isolated central mounting hole for easy heatsink installation.
- Operating junction temperature up to 175°C.
- Easy paralleling capability.
- Simple gate drive requirements.
- TO-247AC package provides excellent thermal performance.
Specifications
| Parameter | Details |
|---|---|
| Product Type | N Channel Power MOSFET |
| Series | HEXFET |
| Part Number | IRFP044 |
| Channel Type | N-Channel |
| Package | TO-247AC |
| Mounting Type | Through Hole |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID @ TC=25°C) | 57A |
| Continuous Drain Current (ID @ TC=100°C) | 40A |
| Pulsed Drain Current (IDM) | 230A |
| Power Dissipation (PD) | 180W |
| Drain-Source On Resistance (RDS(on)) | 0.028Ω |
| Single Pulse Avalanche Energy | 53mJ |
| Peak Diode Recovery dv/dt | 4.5V/ns |
| Operating Junction Temperature | -55°C to +175°C |
| Storage Temperature | -55°C to +175°C |
| Junction-to-Case Thermal Resistance | 0.83°C/W |
| Case-to-Sink Thermal Resistance | 0.24°C/W |
| Junction-to-Ambient Thermal Resistance | 40°C/W |
Dimensions
Pinout
| Pin No. | Pin Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls switching of the MOSFET |
| 2 | Drain (D) | Main current path |
| 3 | Source (S) | Current return path |
Footprint
Applications
- Switching power supplies.
- DC-DC converters.
- Motor drive circuits.
- Battery-powered systems.
- DC motor controllers.
- Inverters.
- UPS systems.
- High-current switching circuits.
- Industrial automation equipment.
- Power management systems.
- Solar power converters.
- Electronic load circuits.
Packages
- 1 x IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC
Datasheet
Related products
