K40H1203 IGBT Transistor 1200V 80A TO-247

K40H1203 IGBT Transistor 1200V 80A TO-247

The K40H1203 is the marking for the IKW40N120H3, a third-generation high-speed IGBT from Infineon using TRENCHSTOP technology and fieldstop construction. It combines low collector-emitter saturation voltage with high-speed switching and includes an anti-parallel diode with soft, fast recovery characteristics. The datasheet specifies a maximum junction temperature of 175°C and a PG-TO247-3 package.

This IGBT is designed for demanding power-electronics applications including uninterruptible power supplies, welding converters, and converters operating at high switching frequencies. The device supports high collector current capability and provides an integrated anti-parallel diode, making it suitable for power conversion stages where controlled switching and reverse-current handling are required.

Features:

• High-speed IGBT technology.
• TRENCHSTOP technology.
• Fieldstop construction.
• Soft and fast recovery anti-parallel diode.
• Low conduction losses.
• Low EMI characteristics.
• Suitable for high-frequency switching.
• Integrated anti-parallel diode.
• Through-hole power package.
• RoHS-compliant lead plating.

Specifications:

Pinout:

Applications:

• Uninterruptible power supplies (UPS).
• Welding converters.
• High-frequency power converters.
• Inverters.
• Industrial power conversion.
• Switching power supplies.
• Motor drive power stages.
• DC-AC conversion.

Packages Included:

• 1 × K40H1203 IGBT Transistor 1200V 80A TO-247.

Documents:

• K40H1203 Datasheet.