Specifications:
- Type Designator: 15N50
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 500 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 5.4 nS
- Drain-Source Capacitance (Cd): 230 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
- Package: TO-220
