H25T120 IGBT MOSFET 1200V 25A TO-247AC
The H25T120 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for power-switching applications where high blocking voltage and controlled switching are required. It combines the voltage-control characteristics of a MOSFET gate with the high-current conduction capability of an IGBT, making it suitable for power conversion and switching stages.
The TO-247AC package provides a robust through-hole format suitable for power electronics assemblies and can be mounted with a suitable heatsink for thermal management. The device can be used in inverter stages, motor control circuits, switching power supplies, induction heating equipment, and other applications requiring high-voltage power switching.
Features:
- IGBT power-switching technology.
- Insulated gate for voltage-controlled operation.
- Suitable for high-power switching circuits.
- Through-hole power package.
- Suitable for use with external heatsinking.
- Designed for inverter and power-conversion applications.
Specifications:
| Parameter | Value |
|---|---|
| Part Number | H25T120 |
| Device Type | IGBT |
| Maximum Collector-Emitter Voltage (VCE) | 1200 V |
| Maximum Collector Current (IC) | 25 A |
| Package | TO-247AC |
| Mounting Type | Through-Hole |
| Gate Drive Type | Insulated Gate |
| Polarity | N-Channel IGBT |
| Configuration | Single |
Pinout:
| Pin | Terminal |
|---|---|
| 1 | Gate (G) |
| 2 | Collector (C) |
| 3 | Emitter (E) |
Applications:
- Power inverters
- Motor drives
- Industrial power supplies
- Welding equipment
- Induction heating systems
- DC-AC converters
- High-voltage switching circuits
- Renewable-energy power converters
Packages Included:
- 1 × H25T120 IGBT MOSFET 1200V 25A TO-247AC.