Toshiba 2SK2846 N-Channel MOSFET Transistor 600V 2A 2-8M1B
Toshiba 2SK2846 N-channel through-hole MOSFET (600V, 2A). Features low ON resistance (4.2Ω typ) for efficient switching in DC-DC converters and motor drives.
20.00 EGP
In stockSKU 34963001511110
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Toshiba 2SK2846 N-Channel MOSFET Transistor 600V 2A 2-8M1B
The 2SK2846 is a high-performance, silicon N-channel MOS type field effect transistor. It features an advanced enhancement-mode structure designed to handle a maximum drain-source voltage of 600V and a continuous DC drain current of up to 2A. This transistor is highly efficient and optimized for power management and switching environments.
Features
- Low Drain-Source ON Resistance
- High Forward Transfer Admittance
- Low Leakage Current
- Enhancement-Mode
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V |
| Drain-Gate Voltage (RGS = 20 kΩ) | VDGR | 600 | V |
| Gate-Source Voltage | VGSS | ±30 | V |
| Drain Current (DC) (Note 1) | ID | 2 | A |
| Drain Current (Pulse, t = 1 ms) (Note 1) | IDP | 5 | A |
| Drain Current (Pulse, t = 100 μs) (Note 1) | IDF | 8 | A |
| Drain Power Dissipation | PD | 1.3 | W |
| Single Pulse Avalanche Energy (Note 2) | EAS | 93 | mJ |
| Avalanche Current | IAR | 2 | A |
| Repetitive Avalanche Energy (Note 3) | EAR | 0.13 | mJ |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature Range | Tstg | -55 ~ 150 | °C |
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Channel to Ambient | Rth(ch-a) | 96.1 | °C/W |
Electrical Characteristics (Ta = 25°C)
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Gate Leakage Current | IGSS | VGS = ±25 V, VDS = 0 V | — | — | ±10 | μA |
| Gate-Source Breakdown Voltage | V(BR)GSS | ID = ±10 μA, VGS = 0 V | ±30 | — | — | V |
| Drain Cut-off Current | IDSS | VDS = 600 V, VGS = 0 V | — | — | 100 | μA |
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 10 mA, VGS = 0 V | 600 | — | — | V |
| Gate Threshold Voltage | Vth | VDS = 10 V, ID = 1 mA | 2.0 | — | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10 V, ID = 1 A | — | 4.2 | 5.0 | Ω |
| Forward Transfer Admittance | |Yfs| | VDS = 10 V, ID = 1 A | 0.8 | 1.7 | — | S |
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0 V, f = 1 MHz |
— | 380 | — | pF |
| Reverse Transfer Capacitance | Crss | — | 40 | — | pF | |
| Output Capacitance | Coss | — | 120 | — | pF | |
| Rise Time | tr | VDD ≈ 200 V, ID = 1 A, RL = 200 Ω, VGS = 10 V, Duty ≤ 1%, tw = 10 μs |
— | 15 | — | ns |
| Turn-on Time | ton | — | 25 | — | ns | |
| Fall Time | tf | — | 20 | — | ns | |
| Turn-off Time | toff | — | 80 | — | ns | |
| Total Gate Charge | Qg | VDD ≈ 480 V, VGS = 10 V, ID = 2 A |
— | 9 | — | nC |
| Gate-Source Charge | Qgs | — | 5 | — | nC | |
| Gate-Drain (“Miller”) Charge | Qgd | — | 4 | — | nC |
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Continuous Drain Reverse Current | IDR | — | — | — | 2 | A |
| Pulse Drain Reverse Current (t = 1 ms) | IDRP | — | — | — | 5 | A |
| Pulse Drain Reverse Current (t = 100 μs) | IDRP | — | — | — | 8 | A |
| Forward Voltage (Diode) | VDSF | IDR = 2 A, VGS = 0 V | — | — | -1.5 | V |
| Reverse Recovery Time | trr | IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/μs |
— | 1000 | — | ns |
| Reverse Recovery Charge | Qrr | — | 3.5 | — | μC |
Applications
- Chopper Regulators
- DC-DC Converters
- Motor Drive Applications
- General power switching in computer, office, industrial, and domestic appliances
Package Content
- 1 x Toshiba 2SK2846 N-Channel MOSFET Transistor 600V 2A 2-8M1B
DataSheet
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